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參數(shù)資料
| 型號(hào)： | IPI08CNE8NG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大?。?/td> | 472K |
| 代理商： | IPI08CNE8NG |
IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
Infineon Technologies AG 2006.
All Rights Reserved.
Published by
Infineon Technologies AG
81726 München, Germany
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
page 11
2006-02-17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPB09N03LAG | OptiMOS㈢2 Power-Transistor |
| IPB09N03LA | OptiMOS 2 Power-Transistor |
| IPI09N03LA | OptiMOS 2 Power-Transistor |
| IPP09N03LA | OptiMOS 2 Power-Transistor |
| IPB100N04S2-04 | OptiMOS㈢ Power-Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPI08CNE8NGXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 95A 3-Pin(3+Tab) TO-262 |
| IPI09N03LA | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPI09N03LAXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(3+Tab) TO-262 |
| IPI100N04S303 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPI100N04S3-03 | 功能描述:MOSFET OPTIMOS -T PWR-TRANS 40V 100A 2.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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