參數(shù)資料
型號(hào): IPI08CNE8NG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢2 Power-Transistor
中文描述: 的OptiMOS㈢2功率晶體管
文件頁數(shù): 1/11頁
文件大?。?/td> 472K
代理商: IPI08CNE8NG
IPB08CNE8N G
IPI08CNE8N G IPP08CNE8N G
Opti
MOS
2 Power-Transistor
Features
N-channel, normal level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target application
Ideal for high-frequency switching and synchronous rectification
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
95
A
T
C
=100 °C
68
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
380
Avalanche energy, single pulse
E
AS
I
D
=95 A,
R
GS
=25
262
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=95 A,
V
DS
=68 V,
d
i
/d
t
=100 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
167
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
85
V
R
DS(on),max (TO263)
8.2
m
I
D
95
A
Product Summary
Type
IPB08CNE8N G
IPI08CNE8N G
IPP08CNE8N G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
08CNE8N
08CNE8N
08CNE8N
Rev. 1.01
page 1
2006-02-17
相關(guān)PDF資料
PDF描述
IPB09N03LAG OptiMOS㈢2 Power-Transistor
IPB09N03LA OptiMOS 2 Power-Transistor
IPI09N03LA OptiMOS 2 Power-Transistor
IPP09N03LA OptiMOS 2 Power-Transistor
IPB100N04S2-04 OptiMOS㈢ Power-Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IPI08CNE8NGXK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 95A 3-Pin(3+Tab) TO-262
IPI09N03LA 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPI09N03LAXK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(3+Tab) TO-262
IPI100N04S303 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPI100N04S3-03 功能描述:MOSFET OPTIMOS -T PWR-TRANS 40V 100A 2.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube