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參數(shù)資料
| 型號： | IPB25N06S3L-22 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶體管 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 165K |
| 代理商： | IPB25N06S3L-22 |
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Published by
Infineon Technologies AG
St.-Martin-Strae 53
D-81541 München
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-09-16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPI25N06S3L-22 | OptiMOS㈢-T Power-Transistor |
| IPB26CN10NG | OptiMOS㈢2 Power-Transistor |
| IPD25CN10NG | OptiMOS㈢2 Power-Transistor |
| IPI26CN10NG | OptiMOS㈢2 Power-Transistor |
| IPB26CNE8NG | OptiMOS㈢2 Power-Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPB25N06S3L-22_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPB25N06S3L22XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 25A 3-Pin(2+Tab) TO-263 |
| IPB260N06N3 G | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPB260N06N3G | 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述: |
| IPB260N06N3GATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) TO-263 T/R 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 60V 27A TO263-3 |
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