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參數(shù)資料
| 型號： | IMC020FLSP |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 20 MegaBaytes Series 2+ Flash Memory Card(20M字節(jié)閃速存儲器卡) |
| 中文描述： | 10M X 16 FLASH 12V PROM CARD, 250 ns, XMA68 |
| 文件頁數(shù)： | 26/41頁 |
| 文件大小： | 575K |
| 代理商： | IMC020FLSP |
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SERIES 2+ FLASH MEMORY CARDS
E
26
8.5
V
CC
= 3.3 V
DC Characteristics
—CMOS Interfacing
Sym
Parameter
Density
Notes
x8 Mode
x16 Mode
Unit
Test Conditions
(Mbytes)
Typ
Max
Typ
Max
I
CCR
V
CC
Read Current
4, 8, 20, 40
1, 2, 3
75
100
mA
V
CC
= V
CC
Max
t
CYCLE
= 250 ns
I
CCW
V
CC
Write Current
4, 8, 20, 40
1, 2, 3, 4
40
50
mA
V
PP
Gen = OFF
during Data Write
1, 2, 3, 5
100
175
mA
V
PP
Gen = ON
during Data Write
I
CCE
V
CC
Erase Current
4, 8, 20, 40
1, 2, 3, 4
40
50
mA
V
PP
Gen = OFF
1, 2, 3, 5
80
150
mA
V
PP
Gen = ON
I
CCSL
V
CC
Sleep Current
4
1, 3, 4, 6
25
75
25
75
μ
A
V
CC
= V
CC
Max
8
25
95
25
95
Control Signals =
20
35
155
35
155
V
CC
40
45
255
45
255
I
CCS
V
CC
Standby
4
1, 2, 3,
75
115
110
210
μ
A
V
CC
= V
CC
Max
Current
8
4, 6
80
125
115
230
Control Signals =
20
85
155
120
250
V
CC
40
100
200
150
300
I
PPW
V
PP
Write Current
4, 8, 20, 40
1, 2, 3, 4
10
15
20
30
mA
Data Write in
Progress
V
PP
= V
PPH
I
PPE
V
PP
Erase Current
4, 8, 20, 40
1, 2, 3, 4
6
12
12
22
mA
Block (Pair)
Erase in Progress
V
PP
= V
PPH
I
PPSL
V
PP
Sleep Current
4, 8, 20, 40
1, 2, 3, 4
0
0.5
0
0.5
mA
V
PP
≤
V
CC
I
PPS
V
PP
Standby/
Read Current
4, 8, 20, 40
1, 2, 3, 4
0
0.5
0
0.5
mA
V
PP
≤
V
CC
CMOS Test Conditions: V
IL
= GND ± 0.2 V
V
IH
= V
CC
± 0.2 V
NOTES:
1.
2.
3.
4.
5.
6.
All currents are RMS values unless otherwise specified. Typical V
CC
=
5 V
, V
PP
= 12 V, T = 25 °C.
Two devices active in word mode, one device active in byte mode.
Devices not addressed are in sleep mode.
V
PP
Generation Circuitry turned off.
V
PP
Generation Circuitry turned on.
Control Signals, CE
1
#, CE
2
#, OE#, WE#, REG#.
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