參數(shù)資料
型號(hào): IMC004FLSA
廠商: INTEL CORP
元件分類: DRAM
英文描述: 5 Volt Series 2 Flash Memory Card(5V系列2閃速存儲(chǔ)器卡)
中文描述: 2M X 16 FLASH 12V PROM CARD, 150 ns, XMA68
文件頁(yè)數(shù): 22/51頁(yè)
文件大?。?/td> 827K
代理商: IMC004FLSA
iMC002/004/010/020FLSA
E
22
PRELIMINARY
Table 4. Device Command Set
First Bus Cycle
Second Bus Cycle
Data
Data
28F008SA
Command
(1)
Bus
Cycles
Req’d
Operation
Addr
(2)
x8 Mode x16 Mode Operation
Addr
(2)
x8 Mode
x16 Mode
Read
Array/Reset
1
Write
DA
FFH
FFFFH
Intelligent
Identifer
3
Write
DA
90H
9090H
Read
IA
IID
(3)
IID
(3)
Read Device
Status Register
2
Write
DA
70H
7070H
Read
DA
SRD
(4)
SRD
(4)
Clear Device
Status Register
1
Write
DA
50H
5050H
Erase
Setup/Erase
Confirm
2
Write
BA
20H
2020H
Write
BA
D0H
D0D0H
Erase Suspend/
Erase Resume
2
Write
DA
B0H
B0B0H
Write
DA
D0H
D0D0H
Write
Setup/Write
2
Write
WA
40H
4040H
Write
WA
WD
(5)
WD
(5)
Alternate Write
Setup/Write
(6)
2
Write
WA
10H
1010H
Write
WA
WD
(5)
WD
(5)
NOTES:
1.
2.
Commands other than those shown above are reserved by Intel for future device implementations and should not be used.
DA = A device-level (or device pair) address within the card.
BA = Address within the block of a specific device (device pair) being erased.
WA = Address of memory location to be written.
IA
= A device-level address; 00H for manufacturer code, 01 for device code.
Following the intelligent identifier command, two read operations access manufacturer (89H) and device codes (A2H).
SRD = Data read from device status register.
WD = Data to be written at location WA. Data is latched on the rising edge of WE#.
Either 40H or 10H are recognized by the WSM as the Write Setup command.
3.
4.
5.
6.
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