參數(shù)資料
型號： IGD01N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁數(shù)： 2/13頁
文件大?。?/td> 390K
代理商： IGD01N120H2
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
2
Rev. 2, Mar-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
4.5
R
thJA
P-TO-220-3-1
62
40
R
thJA
P-TO-263 (D
2
PAK)
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=300
μ
A
V
GE
= 15V,
I
C
=1A
T
j
=25
°
C
T
j
=150
°
C
V
GE
= 10V,
I
C
=1A,
T
j
=25
°
C
1200
-
-
Collector-emitter saturation voltage
-
-
-
2.2
2.5
2.4
3
2.8
-
-
3.9
Gate-emitter threshold voltage
V
GE(th)
I
CES
I
C
=30
μ
A,
V
CE
=
V
GE
V
CE
=1200V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=1A
2.1
V
Zero gate voltage collector current
-
-
-
-
20
80
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
40
-
nA
S
0.75
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
91.6
9.8
3.4
8.6
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=1A
V
GE
=15V
P-TO-220-3-1
P-TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
7
13
-
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
相關(guān)PDF資料
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