參數(shù)資料
型號(hào)： IGP01N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 390K
代理商： IGP01N120H2
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
1
Rev. 2, Mar-04
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
G
E
off
T
j
Package
Ordering Code
IGP01N120H2
1200V
1A
0.09mJ
150
°
C
P-TO-220-3-1
Q67040-S4593
IGB01N120H2
1200V
1A
0.09mJ
150°C
P-TO-263 (D
2
PAK)
Q67040-S4592
IGD01N120H2
1200V
1A
0.09mJ
150°C
P-TO-252 (DPAK)
Q67040-S4591
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
1200
3.2
1.3
V
A
I
Cpuls
-
3.5
3.5
V
GE
P
tot
±
20
28
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°
C
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
相關(guān)PDF資料
PDF描述
IGB15N60T Low Loss IGBT in Trench and Fieldstop technology
IGB50N60T LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
IGP50N60T LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
IGW50N60T LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
IGW15T120 Low Loss IGBT in Trench and Fieldstop Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGP01N120H2_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology
IGP01N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3
IGP03N120H2 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGP03N120H2_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology
IGP03N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*