參數(shù)資料
型號: IGP01N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology
中文描述: 高速2 -技術(shù)
文件頁數(shù): 11/13頁
文件大小: 390K
代理商: IGP01N120H2
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
11
Rev. 2, Mar-04
dimensions
symbol
[mm]
symbol
min
min
A
6.40
A
6.40
A
B
5.25
B
5.25
B
C
(0.65)
C
(0.65)
C
D
0.63
D
0.63
D
E
2.28
E
F
2.19
F
2.19
F
G
0.76
G
0.76
G
H
0.90
H
0.90
H
K
5.97
K
5.97
K
L
9.40
L
9.40
L
M
0.46
M
0.46
M
N
0.87
N
0.87
N
P
0.51
P
0.51
P
R
5.00
R
5.00
R
S
4.17
S
4.17
S
T
0.26
T
0.26
T
U
-
U
-
U
TO-252AA (DPak)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGP01N120H2_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology
IGP01N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3
IGP03N120H2 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGP03N120H2_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology
IGP03N120H2XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3