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參數(shù)資料
| 型號： | IDT70T3539M |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 2.5V的為512k × 36 SYNCHRONOU S雙，端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 22/26頁 |
| 文件大?。?/td> | 421K |
| 代理商： | IDT70T3539M |
6.42
IDT70T3539M Preliminary
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Depth and Width Expansion
The IDT70T3539M features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
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IDT70T3539M
CE
0
CE
1
CE
1
CE
0
CE
0
CE
1
A
19
CE
1
CE
0
V
DD
V
DD
IDT70T3539M
IDT70T3539M
IDT70T3539M
Control Inputs
Control Inputs
Control Inputs
Control Inputs
BE
,
R/
W
,
OE
,
CLK,
ADS
,
REPEAT
,
CNTEN
Figure 4. Depth and Width Expansion with IDT70T3539M
The IDT70T3539M can also be used in applications requiring
expanded width, as indicated in Figure 4. Through combining the control
signals, the devices can be grouped as necessary to accommodate
applications needing 72-bits or wider.
Register Sizes, and System Interface Parameter tables. Specifically,
commands for Array B must precede those for Array A in any JTAG
operations sent to the IDT70T3539M. Please reference Application Note
AN-411, "JTAG Testing of Multichip Modules" for specific instructions on
performing JTAG testing on the IDT70T3539M. AN-411 is available at
www.idt.com.
Array A
Array B
TCK
TMS
TRST
TDI
TDOA
TDIB
TDO
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IDT70T3539M
Figure 5. JTAG Configuration for IDT70T3539M
JTAG Functionality and Configuration
The IDT70T3539M is composed of two independent memory arrays,
and thus cannot be treated as a single JTAG device in the scan chain.
The two arrays (A and B) each have identical characteristics and
commands but must be treated as separate entities in JTAG operations.
Please refer to Figure 5.
JTAG signaling must be provided serially to each array and utilize the
information provided in the Identification Register Definitions, Scan
.
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| IDT70T3539MS133BC | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| IDT70T3539MS133BC8 | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3539MS133BCG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCI | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
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