參數(shù)資料
型號(hào): IDT70T3539M
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 高速與3.3V 2.5V的為512k × 36 SYNCHRONOU S雙,端口靜態(tài)RAM或2.5V的接口
文件頁(yè)數(shù): 10/26頁(yè)
文件大?。?/td> 421K
代理商: IDT70T3539M
6.42
IDT70T3539M Preliminary
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing)
(2,3)
(V
DD
= 2.5V ± 100mV, T
A
= 0°C to +70°C)
NOTES:
1. The Pipelined output parameters (t
CYC2
, t
CD2
) apply to either or both left and right ports when
FT
/PIPE
X
= V
DD
(2.5V). Flow-through parameters (t
CYC1
, t
CD1
)
apply when
FT
/PIPE = V
ss
(0V) for that port.
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (
OE
),
FT
/PIPE and OPT.
FT
/PIPE and OPT should be
treated as DC signals, i.e. steady state during operation.
3. These values are valid for either level of V
DDQ
(3.3V/2.5V). See page 6 for details on selecting the desired operating voltage levels for each port.
4. Guaranteed by design (not production tested).
70T3539MS166
Com'l Only
70T3539MS133
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t
CYC1
Clock Cycle Time (Flow-Through)
(1)
20
____
25
____
ns
t
CYC2
Clock Cycle Time (Pipelined)
(1)
6
____
7.5
____
ns
t
CH1
Clock High Time (Flow-Through)
(1)
8
____
10
____
ns
t
CL1
Clock Low Time (Flow-Through)
(1)
8
____
10
____
ns
t
CH2
Clock High Time (Pipelined)
(2)
2.4
____
3
____
ns
t
CL2
Clock Low Time (Pipelined)
(1)
2.4
____
3
____
ns
t
SA
Address Setup Time
1.7
____
1.8
____
ns
t
HA
Address Hold Time
0.5
____
0.5
____
ns
t
SC
Chip Enable Setup Time
1.7
____
1.8
____
ns
t
HC
Chip Enable Hold Time
0.5
____
0.5
____
ns
t
SB
Byte Enable Setup Time
1.7
____
1.8
____
ns
t
HB
Byte Enable Hold Time
0.5
____
0.5
____
ns
t
SW
R/W Setup Time
1.7
____
1.8
____
ns
t
HW
R/W Hold Time
0.5
____
0.5
____
ns
t
SD
Input Data Setup Time
1.7
____
1.8
____
ns
t
HD
Input Data Hold Time
0.5
____
0.5
____
ns
t
SAD
ADS
Setup Time
1.7
____
1.8
____
ns
t
HAD
ADS
Hold Time
0.5
____
0.5
____
ns
t
SCN
CNTEN
Setup Time
1.7
____
1.8
____
ns
t
HCN
CNTEN
Hold Time
0.5
____
0.5
____
ns
t
SRPT
REPEAT
Setup Time
1.7
____
1.8
____
ns
t
HRPT
REPEAT
Hold Time
0.5
____
0.5
____
ns
t
OE
Output Enable to Data Valid
____
4.4
____
4.6
ns
t
OLZ
(6)
Output Enable to Output Low-Z
1
____
1
____
ns
t
OHZ
(6)
Output Enable to Output High-Z
1
3.6
1
4.2
ns
t
CD1
Clock to Data Valid (Flow-Through)
(1)
____
12
____
15
ns
t
CD2
Clock to Data Valid (Pipelined)
(1)
____
3.6
____
4.2
ns
t
DC
Data Output Hold After Clock High
1
____
1
____
ns
t
CKHZ
(6)
Clock High to Output High-Z
1
3.6
1
4.2
ns
t
CKLZ
(6)
Clock High to Output Low-Z
1
____
1
____
ns
t
INS
Interrupt Flag Set Time
____
7
____
7
ns
t
INR
Interrupt Flag Reset Time
____
7
____
7
ns
t
COLS
Collision Flag Set Time
____
3.6
____
4.2
ns
t
COLR
Collision Flag Reset Time
____
3.6
____
4.2
ns
t
ZZSC
Sleep Mode Set Cycles
2
____
2
____
cycles
t
ZZRC
Sleep Mode Recovery Cycles
3
____
3
____
cycles
Port-to-Port Delay
t
CO
Clock-to-Clock Offset
5
____
6
____
ns
t
OFS
Clock-to-Clock Offset for Collision Detection
Please refer to Collision Detection Timing Table on Page 19
5678 tbl 11
相關(guān)PDF資料
PDF描述
IDT70T3539MS999BC HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS999BCI HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS133BC HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS133BCI HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS166BC HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70T3539MS133BC 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz,400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
IDT70T3539MS133BC8 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3539MS133BCG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA
IDT70T3539MS133BCGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA
IDT70T3539MS133BCI 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)