參數(shù)資料
型號: IC42S81600L-8TI(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動態(tài)RAM
文件頁數(shù): 68/69頁
文件大?。?/td> 1118K
代理商: IC42S81600L-8TI(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
8
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
AC TEST CONDITIONS
(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Parameter
Rating
Unit
AC input Levels (VIH /VIL )
2.0 / 0.8
V
Input timing reference level /Output timing reference level
1.4
V
Input rise and fall time
1
ns
Output load condition
50
pF
VDDQ
VOUT
Device
Under
Test
50PF
Z = 50
Output Load Conditions
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