參數(shù)資料
型號: IC42S81600L-8TI(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動態(tài)RAM
文件頁數(shù): 18/69頁
文件大?。?/td> 1118K
代理商: IC42S81600L-8TI(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
25
DR023-0E 6/11/2004
READ to WRITE Command Interval
CAS latency=2
CLK
Command
DQM
DQ
Hi-Z
D0
D3
D2
D1
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
1 cycle
Write
Burst length=8, CAS latency=2
CLK
Command
DQM
DQ
Q0
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
Write
T9
necessary
Q2
Q1
D0
D2
D1
Hi-Z is
example: Burst length=4, CAS latency=3
CLK
Command
DQM
DQ
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
Write
necessary
D0
D2
D1
Hi-Z is
Q2
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