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參數(shù)資料
| 型號(hào)： | IC42S81600L-8TI(G) |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4銀行（128 - Mbit的）同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 16/69頁(yè) |
| 文件大小： | 1118K |
| 代理商： | IC42S81600L-8TI(G) |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
23
DR023-0E 6/11/2004
Read / Write Command Interval
Read to Read Command Interval
During a read cycle when a new read command is asserted, it will be effective after the CAS latency, even if the previous
read operation has not completed. READ will be interrupted by another READ.
Each read command can be asserted in every clock without any restriction.
Write to Write Command Interval
During a write cycle, when a new Write command is asserted, the previous burst will terminate and the new burst will begin
with a new write command. WRITE will be interrupted by another WRITE.
Each write command can be asserted in every clock without any restriction.
READ to READ Command Interval
Burst lengh=4, CAS latency=2
CLK
Command
DQ
QA0
QB2
QB1
QB0
Read A
T0
T1
T2
T3
T4
T5
T6
T7
Hi-Z_
T8
1
cycle
QB3
Read B
Burst lengh=4, CAS latency=2
CLK
Command
DQ
QA0
QB2
QB1
QB0
Write A
T0
T1
T2
T3
T4
T5
T6
T7
Hi-Z_
T8
1
cycle
QB3
Write B
WRITE to WRITE Command Interval
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