參數(shù)資料
型號(hào): IC42S81600L-8TI(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 28/69頁(yè)
文件大小: 1118K
代理商: IC42S81600L-8TI(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
34
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
Power on Sequence and Auto Refresh (CBR)
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
High level
is required
Minimum of 8 Refresh Cycles are required
t
RSC
t
RP
High Level is Necessary
t
RC
Address Key
Inputs
be stable
for 200us
Precharge
All Banks
must
Command
1st Auto
Command
Refresh
2nd Auto
Refresh
Command
Mode
Set Command
Command
Register
Hi-Z
BS0, 1
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