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| 型號(hào)： | IBM13M8734HCB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 72 1 Bank Registered SDRAM Module with PLL(8M x 72 1組帶鎖相環(huán)的寄存同步動(dòng)態(tài)RAM模塊) |
| 中文描述： | 8米× 72 1帶鎖相環(huán)銀行注冊(cè)內(nèi)存模塊（8米× 72 1組帶鎖相環(huán)的寄存同步動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 12/19頁(yè) |
| 文件大?。?/td> | 325K |
| 代理商： | IBM13M8734HCB |
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IBM13M8734HCB
8M x 72 1 Bank Registered SDRAM Module with PLL
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 12 of 19
08J0514.E24449
4/98
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
Test Condition
Speed
Units
Notes
-360,
-365, -370
-10
Operating Current
1 bank operation
I
CC1
t
RC
=
t
RC
(min), t
CK
= min
Active-Precharge command cycling
without burst operation
1235
929
mA
1
Precharge Standby Current in
Power Down Mode
I
CC2P
CKE0
≤
V
IL
(max), t
CK
= min,
CS =V
IH
(min)
137
92
mA
1
I
CC2PS
CKE0
≤
V
IL
(max), t
CK
= Infinity,
S0, S2 =V
IH
(min)
33
33
mA
Precharge Standby Current in Non-
Power Down Mode
I
CC2
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
515
284
mA
1
I
CC2S
CKE0
≥
V
IH
(min), t
CK
= Infinity,
S0, S2 =V
IH
(min)
60
60
mA
No Operating Current
(Active state: 4bank)
I
CC3
CKE0
≥
V
IH
(min), t
CK
= min,
S0, S2 =V
IH
(min)
605
344
mA
1
I
CC3P
CKE0
≤
V
IL
(max), t
CK
= min,
S0, S2 =V
IH
(min)
(Power Down Mode)
182
146
mA
1
Burst Operating Current
(Active state: 4bank)
I
CC4
t
= min,
Read command cycling
1505
1004
mA
1, 2
Auto (CBR) Refresh Current
I
CC5
t
= min,
CBR command cycling
1370
1109
mA
1
Self Refresh Current
I
CC6
CKE0
≤
0.2V
33
33
mA
1. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
.
Input signals are changed once during t
CK
(min). t
CK
(min) = 10ns (for -360, -365, -370) and 15ns (for -10).
2. The specified values are obtained with the DIMM data outputs open.
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