參數(shù)資料
型號: IBM0418A86LQKA
廠商: IBM Microeletronics
英文描述: 8 Mb Synchronous Communication SRAM(8M位同步流水線式通訊靜態(tài)RAM)
中文描述: 8兆同步通信的SRAM(800萬位同步流水線式通訊靜態(tài)內(nèi)存)
文件頁數(shù): 11/17頁
文件大?。?/td> 299K
代理商: IBM0418A86LQKA
IBM0418A86LQKA
IBM0418A86SQKA
8 Mb Synchronous Communication SRAM
IBM0436A86LQKA
IBM0436A86SQKA
llwp.03
10/11/2000
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 11 of 16
AC Characteristics
(T
A
= 0 to +70
°
C, V
DD
& V
DDQ
= 2.5 or 3.3 V)
Parameter
Symbol
-6
-7
-7F
-10
Units
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Clock
Cycle Time
t
KHKH
6.0
6.7
7.5
10
ns
Clock High Pulse Width
t
KHKL
2.0
2.2
2.5
3.0
ns
Clock Low Pulse Width
t
KLKH
2.0
2.2
2.5
3.0
ns
Clock Enable Set-up time
t
EVKH
1.5
1.5
1.5
1.5
ns
Clock Enable Hold time
t
KHEX
0.5
0.5
0.5
0.5
ns
Output
Times
Clock to Output Valid
t
KHQV
3.5
3.8
4.2
5.0
ns
1
Clock to Output Invalid
t
KHQX
1.5
1.5
1.5
1.5
ns
1
Clock High to Output Low-Z
t
KHQX1
1.5
1.5
1.5
1.5
ns
1, 2
Clock High to Output High-Z
t
KHQZ
1.5
3.0
1.5
3.0
1.5
3.5
1.5
3.5
ns
1, 2
Output Enable to Output Valid
t
GLQV
3.5
3.8
4.2
5.0
ns
1
Output Enable to Low-Z
t
GLQX
0.0
0.0
0.0
0.0
ns
1, 2
Output Enable to High-Z
t
GHQZ
3.0
3.0
3.5
4.0
ns
1, 2
Setup
Times
Address Setup Time
t
AVKH
1.5
1.5
1.5
1.5
ns
Sync Select Setup Time
t
CVKH
1.5
1.5
1.5
1.5
ns
Write Enables Setup Time
t
WVKH
1.5
1.5
1.5
1.5
ns
Data In Setup Time
t
DVKH
1.5
1.5
1.5
1.5
ns
Hold
Times
Address Hold Time
t
KHAX
0.5
0.5
0.5
0.5
ns
Sync Select Hold Time
t
KHCX
0.5
0.5
0.5
0.5
ns
Write Enables Hold Time
t
KHWX
0.5
0.5
0.5
0.5
ns
Data In Hold Time
t
KHDX
0.5
0.5
0.5
0.5
ns
Sleep
Mode
ZZ active to input ignored
t
ZZ
0.0
2(t
KHKH)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
ns
ZZ inactive to
input sampled
t
RZZ
0.0
2(t
KHKH)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
ns
ZZ active to Sleep
current
t
ZZI
0.0
2(t
KHKH)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
0.0
2(t
KHKH
)
ns
ZZ inactive to exit
Sleep current
t
RZZI
0.0
0.0
0.0
0.0
ns
1. AC Test Loading on page 10.
2. This parameter is sampled. Transition is measured
±
200mV from steady-state.
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