參數(shù)資料
型號: IBM0165405P
廠商: IBM Microeletronics
英文描述: 16M x 4 12/12 EDO DRAM(16M x 4 動態(tài)RAM(超頁面模式并帶24條地址線,其中12條為行地址選通,12條為列地址選通))
中文描述: 1,600 × 4 12/12 EDO公司的DRAM(1,600 × 4動態(tài)隨機(jī)存儲器(超頁面模式并帶24條地址線,其中12條為行地址選通,12條為列地址選通))
文件頁數(shù): 7/29頁
文件大?。?/td> 1002K
代理商: IBM0165405P
IBM0165405B
IBM0165405P
16M x 4 12/12 EDO DRAM
88H2008
GA14-4253-01
Revised 4/97
IBM Corporation All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 29
Write Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
WCS
Write Command Set Up Time
0
0
ns
1
t
WCH
Write Command Hold Time
7
10
ns
t
WP
Write Command Pulse Width
7
10
ns
t
RWL
Write Command to RAS Lead Time
8
10
ns
t
CWL
Write Command to CAS Lead Time
8
10
ns
t
OED
OE to D
IN
Delay Time
13
15
ns
4
t
DS
D
IN
Setup Time
0
0
ns
3
t
DH
D
IN
Hold Time
7
10
ns
3
1. t
WCS
, t
RWD
, t
CWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are included in the data sheet as electrical charac-
teristics only. If t
WCS
t
WCS
(min.), the cycle is an early write cycle and the data pin will remain open circuit (high impedance)
through the entire cycle. If t
RWD
t
RWD
(min.), t
CWD
t
CWD
(min.), t
AWD
t
AWD
(min.), and t
CPWD
t
CPWD
(min.)(Fast Page Mode), the
cycle is a Read-Modify-Write cycle and the data out will contain data read from the selected cell. If neither of the above sets of con-
ditions is satisfied, the condition of the data out (at access time) is indeterminate.
2. Either t
CDD
or t
OED
must be satisfied.
3. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in Read-Modify-Write cycles.
Discontinued (12/98 - last order; 3/99 last ship)
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