參數(shù)資料
型號: IBM0165405B
廠商: IBM Microeletronics
英文描述: 16M x 4 12/12 EDO DRAM(16M x 4 動態(tài)RAM(超頁面模式并帶24條地址線,其中12條為行地址選通,12條為列地址選通))
中文描述: 1,600 × 4 12/12 EDO公司的DRAM(1,600 × 4動態(tài)隨機存儲器(超頁面模式并帶24條地址線,其中12條為行地址選通,12條為列地址選通))
文件頁數(shù): 3/29頁
文件大?。?/td> 1002K
代理商: IBM0165405B
IBM0165405B
IBM0165405P
16M x 4 12/12 EDO DRAM
88H2008
GA14-4253-01
Revised 4/97
IBM Corporation All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 3 of 29
Truth Table
Function
RAS
CAS
WE
OE
Row
Address
Column
Address
I/O0 - I/O3
Standby
H
H
X
X
X
X
X
High Impedance
Read
L
L
H
L
Row
Col.
Data Out
Early-Write
L
L
L
X
Row
Col.
Data In
Delayed-Write
L
L
H
L
H
Row
Col.
Data In
Read-Modify-Write
L
L
H
L
L
H
Row
Col.
Data Out, Data In
EDO (Hyper Page) Mode
Read
1st Cycle
L
H
L
H
L
Row
Col.
Data Out
2nd Cycle
L
H
L
H
L
N/A
Col.
Data Out
EDO (Hyper Page) Mode
Write
1st Cycle
L
H
L
L
X
Row
Col.
Data In
2nd Cycle
L
H
L
L
X
N/A
Col.
Data In
EDO (Hyper Page) Mode
Read-Modify-Write
1st Cycle
L
H
L
H
L
L
H
Row
Col.
Data Out, Data In
2nd Cycle
L
H
L
H
L
L
H
N/A
Col.
Data Out, Data In
RAS-Only Refresh
L
H
X
X
Row
N/A
High Impedance
CAS-Before-RAS Refresh
H
L
L
H
X
X
N/A
High Impedance
Hidden Refresh
Read
L
H
L
L
H
L
Row
Col.
Data Out
Write
L
H
L
L
L
H
X
Row
Col.
Data In
Self Refresh (LP version only)
H
L
L
H
X
X
X
High Impedance
Discontinued (12/98 - last order; 3/99 last ship)
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IBM0165405P 16M x 4 12/12 EDO DRAM(16M x 4 動態(tài)RAM(超頁面模式并帶24條地址線,其中12條為行地址選通,12條為列地址選通))
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