參數資料
型號: HYE18P32161ACL70
廠商: INFINEON TECHNOLOGIES AG
英文描述: JT 23C 21#20 2#16 SKT PLUG
中文描述: 32M的異步/頁的CellularRAM
文件頁數: 32/33頁
文件大?。?/td> 641K
代理商: HYE18P32161ACL70
HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Appendix B: S/W Register Entry Mode (“4-cycle method”)
Data Sheet
32
V2.0, 2003-12-16
Figure 21
RCR Mapping in S/W Register Entry
PASR
refreshed memory area
D2
D1
D0
Partial Array Self Refresh
0
0
1
0
1
0
D0
entire memory array (def.)
0
0
0
D1
D2
D3
D4
D5
D6
D7
D8
D15
TCSR
PM
0
0
max. case temp.
D5
Temperature-Compensated
Self-Refresh
1
+85°C (def.)
+70°C
+45°C
+15°C
0
1
0
D6
1
0
0
1
DQ<15:0>
Control Register
power down
Deep Power Down Mode
disabled (def.)
X
D4
0
1
1
lower 1/2 of memory array
lower 1/4 of memory array
lower 1/8 of memory array
1
0
1
1
1
0
1
1
1
upper 1/2 of memory array
upper 1/4 of memory array
upper 1/8 of memory array
DPD*
0
zero
1
0
0
page mode
Page Mode Bit
disabled (def.)
enabled
0
1
D7
D15....D8, D3:
reserved, must be set to '0'.
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