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| 型號(hào)： | HYE18P32161ACL70 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | JT 23C 21#20 2#16 SKT PLUG |
| 中文描述： | 32M的異步/頁(yè)的CellularRAM |
| 文件頁(yè)數(shù)： | 14/33頁(yè) |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P32161ACL70 |
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HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
Data Sheet
14
V2.0, 2003-12-16
2
Functional Description
2.1
Power-Up and Initialization
The power-up and initialization sequence guarantees that the device is preconditioned to the user’s specific
needs. Like conventional DRAMs, the CellularRAM must be powered up and initialized in a predefined manner.
V
DD
and
V
DDQ
must be applied at the same time to the specified voltage while the input signals are held in
“DESELECT” state (CS1 = High).
After power on, an initial pause of 150
μ
s is required prior to the control register access or normal operation. Failure
to follow these steps may lead to unpredictable start-up modes.
Figure 4
Power Up Sequence
VDD, VDDQ
t
PU
=150μ
s
ready for normal
operation
VDD,VDDQ,min
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| HYE18P32161ACL85 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No |
| HYE18P32161AC-70 | 32M Asynchronous/Page CellularRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
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| HYE18P32161ACL85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE25L128160AC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L128160AC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
| HYE25L128160AC-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
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