參數(shù)資料
型號: HYB3164165TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO54
文件頁數(shù): 9/30頁
文件大?。?/td> 391K
代理商: HYB3164165TL-60
Semiconductor Group
39
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
AC Characteristics
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3V ,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
84
104
ns
RAS precharge time
30
40
ns
RAS pulse width
50
100k
60
100k
ns
CAS pulse width
8
10k
10
10k
ns
Row address setup time
0
0
ns
Row address hold time
8
10
ns
Column address setup time
0
0
ns
Column address hold time
8
10
ns
RAS to CAS delay time
12
37
14
45
ns
RAS to column address delay time
10
25
12
30
ns
RAS hold time
8
10
ns
CAS hold time
45
50
ns
CAS to RAS precharge time
5
5
ns
Transition time (rise and fall)
1
50
1
50
ns
7
Refresh period for HYB3164165
128
128
ms
Refresh period for HYB3165165
64
64
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
t
RRH
50
60
ns
8, 9
Access time from CAS
13
15
ns
8, 9
Access time from column address
25
30
ns
8,10
OE access time
13
15
ns
Column address to RAS lead time
25
30
ns
Read command setup time
0
0
ns
Read command hold time
0
0
ns
11
Read command hold time referenced to
RAS
0
0
ns
11
CAS to output in low-Z
t
CLZ
0
0
ns
8
相關(guān)PDF資料
PDF描述
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
HYB3164400J 16M x 4-Bit Dynamic RAM
HYB3164405J-50 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:31; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
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