參數(shù)資料
型號: HYB3164165TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO54
文件頁數(shù): 21/30頁
文件大小: 391K
代理商: HYB3164165TL-60
Semiconductor Group
51
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
Hyper Page Mode (EDO) Late Write Cycle
t
RP
t
RSH
t
CAS
t
CAS
t
CP
t
CRP
t
RAL
t
CAH
t
CAH
t
ASC
t
CSH
t
CAS
t
RCD
t
RAH
t
ASR
Column 2
Row
Data In
1
RAS
I/O
(Input)
WE
Address
UCAS
LCAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
HPC
t
CAH
t
RAD
t
ASC
t
RCS
t
ODD
t
DH
Data In
2
Column N
Column 1
Data In
N
t
OEH
t
WP
t
RCS
t
WP
WL16
CP
t
t
DS
t
DH
t
DS
t
WP
t
DS
t
DH
t
RCS
t
CWL
t
CWL
t
CWL
t
RWL
t
ODD
t
OEH
t
ODD
t
OEH
相關(guān)PDF資料
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