參數(shù)資料
型號(hào): HYB3164165TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO54
文件頁數(shù): 6/30頁
文件大?。?/td> 391K
代理商: HYB3164165TL-60
Semiconductor Group
36
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
Block Diagram for HYB 3165165T(L)
相關(guān)PDF資料
PDF描述
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
HYB3164400J 16M x 4-Bit Dynamic RAM
HYB3164405J-50 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:31; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164400AJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
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HYB3164400AJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM