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參數(shù)資料
| 型號： | HYB3117805BSJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8-Bit Dynamic RAM 2k Refresh |
| 中文描述： | 2M X 8 EDO DRAM, 60 ns, PDSO28 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 5/23頁 |
| 文件大?。?/td> | 176K |
| 代理商： | HYB3117805BSJ-60 |
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
5
1998-10-01
Average
V
CC
supply current
-50 ns version
-60 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC MIN.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, during RAS-only
refresh cycles
I
CC1
–
–
80
70
mA
mA
2, 3, )4
2, 3, 4
–
2
mA
–
-50 ns version
-60 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC MIN.
)
Average
V
CC
supply current, during hyper page
mode (EDO)
I
CC3
–
–
80
70
mA
mA
2, 4
2, 4
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, during CAS-
before-RAS refresh mode
I
CC4
–
–
35
30
mA
mA
2, 3, 4
2, 3, 4
I
CC5
–
1
mA
1
-50 ns version
-60 ns version
(RAS, CAS cycling:
t
RC
=
t
RC MIN.
)
I
CC6
–
–
80
70
mA
mA
2, 4
2, 4
Capacitance
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 %,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10)
C
I1
C
I2
C
IO
–
5
pF
Input capacitance (RAS, CAS, WE, OE)
–
7
pF
I/O capacitance (I/O1 - I/O8)
–
7
pF
DC Characteristics
(cont’d)
T
A
= 0 to 70
°
C,
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314405BJBJL-50- | 1M x 4-Bit Dynamic RAM |
| HYB314405BJ-60 | Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount |
| HYB314405BJ-70 | 1M x 4-Bit Dynamic RAM |
| HYB 314405BJ | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式)) |
| HYB 314405BJL-50 | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117805BSJ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| HYB3118160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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