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參數(shù)資料
| 型號： | HYB3117405BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| 中文描述： | 4M X 4 EDO DRAM, 70 ns, PDSO24 |
| 文件頁數(shù)： | 8/26頁 |
| 文件大?。?/td> | 285K |
| 代理商： | HYB3117405BJ-70 |
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Semiconductor Group
8
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
AC Characteristics
5)6)
16E
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
t
REF
84
–
104
–
124
–
ns
RAS precharge time
30
–
40
–
50
–
ns
RAS pulse width
50
10k
60
10k
70
10k
ns
CAS pulse width
8
10k
10
10k
12
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
8
–
10
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
8
–
10
–
12
–
ns
RAS to CAS delay time
12
37
14
45
14
53
ns
RAS to column address delay
10
25
12
30
12
35
ns
RAS hold time
13
15
–
17
–
ns
CAS hold time
40
50
–
60
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
1
50
1
50
1
50
ns
7
Refresh period for HYB5116405
–
64
–
64
–
64
ms
Refresh period for HYB5117405
–
32
–
32
–
32
ms
Refresh period for L-version
–
256
–
256
–
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
17
ns
8, 9
Access time from column address
t
AA
OE access time
–
25
–
30
–
35
ns
8,10
t
OEA
–
13
–
15
–
17
ns
Column address to RAS lead time
t
RAL
Read command setup time
25
–
30
–
35
–
ns
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
0
–
0
–
0
–
ns
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116405BJ-70 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117405BJ-60 | BCD?to?Seven?Segment Decoder IC; Output Current:250uA; Supply Current:3.5A; Supply Voltage:7V |
| HYB3116405BTL-60 | High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 |
| HYB3116405BTL-70 | High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 |
| HYB3117405BJ-50 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117405BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117800BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM |
| HYB3117800BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh |
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