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參數(shù)資料
| 型號： | HYB3117405BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| 中文描述： | 4M X 4 EDO DRAM, 70 ns, PDSO24 |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 285K |
| 代理商： | HYB3117405BJ-70 |
Semiconductor Group
10
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
CAS precharge to RAS Delay
t
RHPC
27
–
32
–
37
–
ns
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
t
PRWC
58
–
68
–
77
–
ns
CAS precharge to WE
t
CPWD
41
–
49
–
56
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
10
–
10
–
10
–
ns
CAS hold time
10
–
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
10
–
ns
Write hold time referenced to RAS
t
WRH
10
–
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
–
40
–
40
–
ns
Self Refresh Cycle
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
_
100k
_
100k
_
ns
17
RAS precharge
95
_
110
_
130
_
ns
17
CAS hold time
-50
_
-50
_
-50
_
ns
17
Test Mode
Write command setup time
t
WTS
t
WTH
t
CHRT
10
–
10
–
10
–
ns
Write command hold time
10
–
10
–
10
–
ns
CAS hold time
30
–
30
–
30
–
ns
AC Characteristics
(cont’d)
5)6)
16E
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116405BJ-70 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117405BJ-60 | BCD?to?Seven?Segment Decoder IC; Output Current:250uA; Supply Current:3.5A; Supply Voltage:7V |
| HYB3116405BTL-60 | High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 |
| HYB3116405BTL-70 | High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 |
| HYB3117405BJ-50 | 3.3V 4M x 4-Bit EDO-Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117405BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3117405BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3117800BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM |
| HYB3117800BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh |
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