參數(shù)資料
型號: HYB3117405BJ-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit EDO-Dynamic RAM
中文描述: 4M X 4 EDO DRAM, 70 ns, PDSO24
文件頁數(shù): 26/26頁
文件大小: 285K
代理商: HYB3117405BJ-70
Semiconductor Group
26
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Package Outlines
Plastic Package P-SOJ-26/24-1 (300 mil)
(Small Outline J-leads, SMD)
1)Doesnotincludeplasticormetalprotrusionof0.15maxperside
IndexMarking
GPJ05628
24x
0.2
M
-0.1
-0.2
0.6
0.1
1)
IndexMarking
9.22
13
1
14
26
7.62
+0.12
0.4
1.27
17.27
0.2
-
0.13
-
-0.25
GPX05857
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參數(shù)描述
HYB3117405BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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HYB3117800BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM
HYB3117800BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh