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參數(shù)資料
| 型號： | HYB 5117805BSJ-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO） |
| 中文描述： | 200萬× 8 -位動態(tài)隨機存儲器（200萬× 8位動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 7/23頁 |
| 文件大?。?/td> | 176K |
| 代理商： | HYB 5117805BSJ-60 |
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
7
1998-10-01
Data to CAS low delay
t
DZC
t
DZO
t
CDD
t
ODD
0
–
0
–
ns
13
Data to OE low delay
0
–
0
–
ns
13
CAS high to data delay
10
–
13
–
ns
14
OE high to data delay
10
–
13
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
–
10
–
ns
Write command pulse width
8
–
10
–
ns
Write command setup time
0
–
0
–
ns
15
Write command to RAS lead time
8
–
10
–
ns
Write command to CAS lead time
8
–
10
–
ns
Data setup time
0
–
0
–
ns
16
Data hold time
8
–
10
–
ns
16
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
113
–
138
–
ns
RAS to WE delay time
64
–
77
–
ns
15
CAS to WE delay time
27
–
32
–
ns
15
Column address to WE delay time
39
–
47
–
ns
15
OE command hold time
10
–
13
–
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
t
HPC
t
CP
t
CPA
t
COH
t
RAS
t
RHCP
t
OES
20
–
25
–
ns
CAS precharge time
8
–
10
–
ns
Access time from CAS precharge
–
27
–
32
ns
7
Output data hold time
5
–
5
–
ns
RAS pulse width in EDO mode
50
200k
60
200k
ns
CAS precharge to RAS delay
27
–
32
–
ns
OE setup time prior to CAS
5
–
5
–
5
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max. min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3117805BSJ-60 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB314405BJBJL-50- | 1M x 4-Bit Dynamic RAM |
| HYB314405BJ-60 | Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount |
| HYB314405BJ-70 | 1M x 4-Bit Dynamic RAM |
| HYB 314405BJ | 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動態(tài) RAM(快速頁面模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5117805BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB5118160BSJ50 | 制造商:SIEMENS 功能描述:* |
| HYB5118160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM |
| HYB5118160BSJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
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