參數(shù)資料
型號(hào)： HYB 5117805BSJ-60
廠商： SIEMENS AG
英文描述： 2M×8 - Bit Dynamic RAM 2k Refresh（Hyper Page Mode EDO）
中文描述： 200萬(wàn)× 8 -位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（200萬(wàn)× 8位動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 4/23頁(yè)
文件大?。?/td> 176K
代理商： HYB 5117805BSJ-60
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
4
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range....................................................................................... – 55 to 150
°
C
Input/output voltage (5 V versions).................................................... – 0.5 to min (
V
CC
+ 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................. – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) .............................................................................................1.0 W
Power dissipation (3.3 V versions) ..........................................................................................0.5 W
Data out current (short circuit) ................................................................................................50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect devce reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
5 V Versions
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
4.5
5.5
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.4
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
3.3 V Versions
– 0.5
V
1
2.4
–
V
1
–
0.4
V
1
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
3.0
3.6
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.0
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
Common Parameters
– 0.5
V
1
2.4
–
V
1
–
V
CC
– 0.2 –
–
0.4
V
1
V
0.2
V
Input leakage current
(0 V
≤
V
IH
≤
V
CC
+ 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
V
CC
+ 0.3 V)
I
I(L)
– 10
10
μ
A
1
I
O(L)
– 10
10
μ
A
1
相關(guān)PDF資料
PDF描述
HYB3117805BSJ-60 2M x 8-Bit Dynamic RAM 2k Refresh
HYB314405BJBJL-50- 1M x 4-Bit Dynamic RAM
HYB314405BJ-60 Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount
HYB314405BJ-70 1M x 4-Bit Dynamic RAM
HYB 314405BJ 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5117805BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB5118160BSJ50 制造商:SIEMENS 功能描述:*
HYB5118160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM
HYB5118160BSJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
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