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參數(shù)資料
| 型號： | HN58S65AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤（8K的字× 8位的EEPROM） |
| 文件頁數(shù)： | 4/19頁 |
| 文件大小： | 134K |
| 代理商： | HN58S65AI |
Datasheet Title
4
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range *
2
V
CC
Vin
–0.6 to +7.0
V
–0.5*
1
to +7.0*
3
V
Topr
–40 to +85
C
Storage temperature range
Notes: 1. Vin min : –3.0 V for pulse width
≤
50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V
CC
+ 1.0 V.
Tstg
–55 to +125
C
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IL
V
IH
Topr
2.2
3.0
3.6
V
0
0
0
V
Input voltage
–0.3*
1
—
0.4
V
V
CC
×
0.7
–40
—
V
CC
+ 0.3*
2
85
V
Operating temperature
Notes: 1. V
IL
min: –1.0 V for pulse width
≤
50 ns.
2. V
IH
max: V
CC
+ 1.0 V for pulse width
≤
50 ns.
—
C
DC Characteristics
(Ta = – 40 to + 85C, V
CC
= 2.2 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
CC1
I
CC2
I
CC3
—
—
2
μ
A
μ
A
μ
A
μ
A
V
CC
= 5.5 V, Vin = 5.5 V
V
CC
= 5.5 V, Vout = 5.5/0.4 V
CE
= V
CC
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
μ
s at V
CC
= 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns at V
CC
= 3.6 V
I
OL
= 1.0 mA
I
OH
= –100
μ
A
Output leakage current
—
—
2
Standby V
CC
current
—
1 to 2
3.5
—
—
500
Operating V
CC
current
—
—
6
mA
—
—
15
mA
Output low voltage
V
OL
V
OH
—
—
0.4
V
Output high voltage
V
CC
×
0.8 —
—
V
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相關(guān)代理商/技術(shù)參數(shù) |
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| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S65AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
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