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參數(shù)資料
| 型號(hào)： | HN58S65AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤（8K的字× 8位的EEPROM） |
| 文件頁(yè)數(shù)： | 14/19頁(yè) |
| 文件大小： | 134K |
| 代理商： | HN58S65AI |
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Datasheet Title
14
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
. When
CE
or
WE
is kept high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
Busy
Signal
RDY/
B us y
signal also allows status of the EEPROM to be determined. The RDY/
Busy
signal has high
impedance except in write cycle and is lowered to V
OL
after the first write signal. At the end of a write
cycle, the RDY/
Busy
signal changes state to high impedance.
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the
rising edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
4
cycles.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58S65AT-15 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65A | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001T-25 | 5015 RR 3#8 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S65AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
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