參數(shù)資料
型號: HN58V1001FP-25
廠商: Hitachi,Ltd.
英文描述: 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
中文描述: 100萬的EEPROM(128 KWord的× 8位)就緒/忙和RES功能
文件頁數(shù): 1/22頁
文件大?。?/td> 119K
代理商: HN58V1001FP-25
HN58V1001 Series
1M EEPROM (128-kword
×
8-bit)
Ready/
Busy
and
RES
function
ADE-203-314G (Z)
Rev. 7.0
Oct. 31, 1997
Description
The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word
×
8-
bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming
function to make the write operations faster.
Features
Single 3 V supply: 2.7 V to 5.5 V
Access time: 250 ns (max)
Power dissipation
Active: 20 mW/MHz, (typ)
Standby: 110 μW (max)
On-chip latches: address, data,
CE
,
OE
,
WE
Automatic byte write: 15 ms (max)
Automatic page write (128 bytes): 15 ms (max)
Data
polling and RDY/
Busy
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
4
erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by
RES
pin
相關PDF資料
PDF描述
HN58V1001T-25 5015 RR 3#8 SKT RECP
HN58V1001 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位))
HN58V256AI 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
HN58V256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256AFP-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
相關代理商/技術參數(shù)
參數(shù)描述
HN58V1001FP-25E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword ?? 8-bit) Ready/Busy and RES function
HN58V1001P-20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
HN58V1001P-25 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001R-20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
HN58V1001R-25 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM