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參數(shù)資料
| 型號(hào)： | HN2D03F |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Application |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 222K |
| 代理商： | HN2D03F |
HN2D03F
2007-11-22
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D03F
High Speed Switching Application
z
Small package
z
Low forward voltage
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F
(2)
= 0.94V (typ.)
: C
T
= 2.5pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
420
V
Reverse voltage
V
R
400
V
Maximum (peak) forward current
I
FM
300*
mA
Average forward current
I
O
100*
mA
Surge current (10ms)
I
FSM
2*
A
Power dissipation
P
300**
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Absolute Maximum Ratings per each one of Q1,Q2 or Q3. In case of simultaneous use, the Absolute Maximum
Ratings per diode shall be derated to 75%.
**: Total rating
Electrical Characteristics
(Q1, Q2, Q3, Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F (1)
V
F (2)
I
R (1)
―
I
F
= 10mA
―
0.8
―
Forward voltage
―
I
F
= 100mA
V
R
= 300V
―
1.0
1.3
V
―
―
―
0.1
Reverse current
I
R (2)
C
T
t
rr
―
V
R
= 400V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
―
―
1.0
μ
A
Total capacitance
―
―
2.5
―
pF
Reverse recovery time
―
―
0.5
―
us
1.CATHODE(C1)
2.CATHODE(C2)
3.CATHODE(C3)
4.ANODE (A3)
5.ANODE (A2)
6.ANODE (A1)
JEDEC
JEITA
TOSHIBA
Weight: 0.015mg(typ.)
―
―
1-3K1C
Unit
in mm
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| HN2E01F | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
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| HN2E02F | Super High Speed Switching Application |
| HN2E04F | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2D03F(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 100MA SM6 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=400V,Io=0.1A,SM6 |
| HN2E01F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E02F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Super High Speed Switching Application |
| HN2E04F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
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