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參數(shù)資料
| 型號(hào)： | HN2E05J |
| 廠商： | Toshiba Corporation |
| 英文描述： | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| 中文描述： | 多芯片分立器件超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 255K |
| 代理商： | HN2E05J |
HN2E05J
2007-11-01
1
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E05J
Super High Speed Switching Application
Interface Circuit
Driver Circuit Applications
Q1
Since bias resistor is built in the transistor, the miniaturization of
the apparatus by curtailment of the number of parts and laborsaving of
an assembly are possible.
Q2
Low Forward Voltage Drop :V
F(3
)=0.98V(typ.)
Fast Reverse Recovery Time :t
rr
=1.6ns(typ.)
Low Total Capacitance
:C
T
=0.5pF(typ.)
Q1(Transistor) : RN2104F equivalent
Q2(Transistor) : 1SS352 equivalent
Q1(Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q2(Diode) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
200
mA
Average forward current
I
O
100
mA
Surge current (10ms)
I
FSM
1
A
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
* Total rating. 200mW per 1 element must not be exceeded.
JEDEC
―
JEITA
―
TOSHIBA
2-3L1E
Weight:0.014g (typ.)
Unit: mm
1.BASE
2.EMITTER
3.ANODE
4.CATHODE
5.COLLECTOR
SMV
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