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參數(shù)資料
| 型號： | HN2E04F |
| 廠商： | Toshiba Corporation |
| 英文描述： | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| 中文描述： | 多芯片分立器件超高速開關應用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 528K |
| 代理商： | HN2E04F |
HN2E04F
2007-11-22
1
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E04F
Super High Speed Switching Application
Audio Frequency Amplifier Application
Audio Low Noise Amplifier Application
Q1
High Voltage :V
CEO
=
120V
High DC Current Gain : h
FE
=200~700
Good h
FE Linearity
:h
FE(
I
C
=
0.1mA)/ h
FE(
I
C
=
2mA) =0.95
Q2
Low Forward Voltage Drop :V
F(3
)=0.98V(typ.)
Fast Reverse Recovery Time :t
rr
=1.6ns(typ.)
Low Total Capacitance
:C
T
=0.5pF(typ.)
Q1 (Transistor) : 2SA1587 equivalent
Q2 (Transistor) : 1SS352 equivalent
Q1 (Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
120
V
Collector-emitter voltage
V
CEO
120
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
20
mA
Q1 (Diode) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300
mA
Average forward current
I
O
100
mA
Surge current (10ms)
I
FSM
1
A
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55~125
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed
200mW per element.
1.NC
2.Emitter
3.Cathode
4.Anode
5.Collector
6.Base
JEDEC
―
JEITA
―
TOSHIBA
2-3N1E
Weight:0.015g (typ.)
Unit: mm
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相關代理商/技術參數(shù) |
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|---|---|
| HN2E05J | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E07JE(TE85L,F) | 功能描述:兩極晶體管 - BJT Small Signal SBD + PNP (BRT) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN2S01F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
| HN2S01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Low Voltage High Speed Switching Application |
| HN2S01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
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