參數(shù)資料
型號(hào): HN29WT800
廠商: Hitachi,Ltd.
英文描述: 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
中文描述: 1048576字× 8位/ 524288字× 16位CMOS閃存
文件頁數(shù): 18/37頁
文件大?。?/td> 170K
代理商: HN29WT800
HN29WT800 Series, HN29WB800 Series
18
Read Operation
HN29WT800/HN29WB800
-8
-10
-12
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Read cycle time
t
RC
t
ACC
t
CE
t
OE
t
DF
t
OH
t
OEH
80
100
120
ns
Address to output delay
CE
to output delay
OE
to output delay
CE
or
OE
high to output float *
1
80
100
120
ns
80
100
120
ns
40
50
60
ns
25
25
30
ns
Address to output hold
OE
hold from
WE
high Status register
read in busy
OE
hold from
WE
high Other read
RP
recovery time before read
RP
low to output High-Z
CE
low to
BYTE
high or low
Address to
BYTE
high or low
BYTE
to output delay
BYTE
low to output High-Z
Notes: 1. t
is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
2. Timing measurements are made under read timing waveform.
0
0
0
ns
80
100
120
ns
t
OEH
t
PS
t
PHZ
t
BCD
t
BAD
t
BYTE
t
BHZ
0
0
0
ns
500
500
500
ns
150
150
300
ns
5
5
5
ns
5
5
5
ns
80
100
120
ns
25
25
30
ns
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