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參數(shù)資料
| 型號(hào)： | HN29WT800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| 中文描述： | 1048576字× 8位/ 524288字× 16位CMOS閃存 |
| 文件頁(yè)數(shù)： | 10/37頁(yè) |
| 文件大小： | 170K |
| 代理商： | HN29WT800 |
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HN29WT800 Series, HN29WB800 Series
10
BYTE
Mode
(
BYTE
= V
IL
)
Mode
Pin
CE
OE
WE
RP
RDY/
Busy
I/O0 to I/O7
Read
Array
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
×
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
×
*
5
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
×
*
5
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
V
OH
(High-Z) Dout
×
*
5
×
Status register
Status Register Data
Lock bit status
Lock bit data (I/O6)
Identifier (Maker)*
1
, *
2
V
OH
(High-Z) 07H
V
OH
(High-Z) 85H / 86H*
6
×
×
×
×
×
Identifier (Device)*
1
, *
3
Output disable
High-Z
Standby
High-Z
Command write*
4
Program
V
IH
V
IH
V
IH
×
V
IL
V
IL
V
IL
×
Command/Data in
Erase
Command
Others
Command
Deep powerdown
Notes: 1. The command programming mode is used to output the identifier code. Refer to the table of
Software Command Definition.
2. A0 = V
IL
3. A0 = V
IH
4. Refer to the table of Software Command Definition. Programming and erase operation begins after
mode setting by command input.
5.
×
can be V
or V
for control pins, and V
or V
(High-Z) for RDY/
Busy
pin. The RDY/
Busy
is an
open drain output pin and indicates status of the internal WSM. When low, it indicates the WSM is
Busy performing an operation. A pull-up resistor of 10 k to 100 k
is required to allow the
RDY/
Busy
signal to transition high indicating a Ready WSM condition.
6. 85H: HN29WT800 Series, 86H: HN29WB800 Series.
V
OH
(High-Z) High-Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WT800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WT800FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WT800FP-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WT800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WT800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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