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參數(shù)資料
| 型號(hào)： | HMC457QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | 1瓦的InGaP HBT功率放大器，1月7日至2月2日吉赫 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 355K |
| 代理商： | HMC457QS16G |
8
A
8 - 307
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1
Vcc
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
2, 4, 5, 7,
9, 16
GND
Ground: Backside of package has exposed metal ground
slug that must also be connected to RF/DC ground.
Vias under the device are required.
3
Vbias
Power Supply for Bias Circuit
6
RF IN
This pin is AC coupled and matched to 50 Ohms from
1.7 - 2.2 GHz
8
Vpd
Power control pin. For maximum power, this pin should be
connected to +5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
10 - 15
RF OUT
RF output and DC bias for the output stage.
Pin Descriptions
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMC457QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| HMC457QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 1W 16-QSOP |
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| HMC459_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
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