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參數(shù)資料
| 型號(hào)： | HMC457QS16G |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | 1瓦的InGaP HBT功率放大器，1月7日至2月2日吉赫 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 355K |
| 代理商： | HMC457QS16G |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.4 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 42.9 mW/°C above 85 °C)
2.78 W
Thermal Resistance
(junction to ground paddle)
23.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Power Dissipation
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-10
-8
-6
-4
-2
0
2
4
6
8
10
P
INPUT POWER (dBm)
Max Pdiss @ +85C
2100 MHz
1900 MHz
Vs (V)
Icq (mA)
4.5
400
5.0
510
5.5
620
Typical Supply Current
vs. Supply Voltage
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
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| HMC457QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
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