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參數(shù)資料
| 型號： | HMC457QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | 1瓦的InGaP HBT功率放大器，1月7日至2月2日吉赫 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 355K |
| 代理商： | HMC457QS16G |
8
A
8 - 300
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Features
v00.0904
General Description
The HMC457QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifier operating
between 1.7 and 2.2 GHz. Packaged in a miniature
16 lead QSOP plastic package, the amplifier gain
is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifier output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE makes
the HMC457QS16G an ideal power amplifier for
Cellular/3G base station & repeater applications.
Functional Diagram
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifications,
T
A
= +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1)
Typical Applications
The HMC457QS16G is ideal for applications requiring
a high dynamic range amplifier:
CDMA & W-CDMA
GSM, GPRS & Edge
Base Stations & Repeaters
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1710 - 1990
2010 - 2170
MHz
Gain
24
27
22
25
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB / °C
Input Return Loss
11
11
dB
Output Return Loss
8
5
dB
Output Power for 1dB Compression (P1dB)
26
29
27.5
30.5
dBm
Saturated Output Power (Psat)
32.5
32
dBm
Output Third Order Intercept (IP3) (note 2)
42
45
42
45
dBm
Noise Figure
6
5
dB
Supply Current (Icq)
500
500
mA
Control Current (Ipd)
4
4
mA
Bias Current (Vbias)
10
10
mA
Note 1: Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC457QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| HMC457QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 1W 16-QSOP |
| HMC459 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
| HMC459_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
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