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參數(shù)資料
| 型號(hào)： | HMC457QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | 1瓦的InGaP HBT功率放大器，1月7日至2月2日吉赫 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 355K |
| 代理商： | HMC457QS16G |
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A
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Output IP3
vs. Temperature @ 2100 MHz
50
Gain, Power & IP3
vs. Supply Current @ 2100 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Noise Figure
vs. Temperature @ 2100 MHz
0
1
2
3
4
5
6
7
8
9
10
1.9
2
2.1
2.2
2.3
+25 C
+85 C
-40 C
N
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
G
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440
480
520
560
600
Psat
OIP3
G
Icq (mA)
*Icq is controlled by varying Vpd
Power Compression @ 2100 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
12
14
16
18
20
22
24
26
28
A
Channel Power (dBm)
Source ACPR
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
0
5
10
15
20
25
30
35
40
45
50
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
INPUT POWER (dBm)
34
36
38
40
42
44
46
48
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25 C
+85 C
-40 C
O
FREQUENCY (GHz)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC457QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
| HMC457QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 1W 16-QSOP |
| HMC459 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
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| HMC459_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz |
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