參數(shù)資料
型號: HM5165805FLJ-5
元件分類: DRAM
英文描述: 8M X 8 EDO DRAM, 50 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, SOJ-32
文件頁數(shù): 5/35頁
文件大?。?/td> 477K
代理商: HM5165805FLJ-5
HM5164805F Series, HM5165805F Series
13
Write Cycle
HM5164805F/HM5165805F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
0—
ns
14
Write command hold time
t
WCH
8
10
ns
Write command pulse width
t
WP
8
10
ns
Write command to
RAS lead time
t
RWL
13
15
ns
Write command to
CAS lead time
t
CWL
8
10
ns
Data-in setup time
t
DS
0—
ns
15
Data-in hold time
t
DH
8
10
ns
15
Read-Modify-Write Cycle
HM5164805F/HM5165805F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read-modify-write cycle time
t
RWC
116
140
ns
RAS to WE delay time
t
RWD
67
79
ns
14
CAS to WE delay time
t
CWD
30
34
ns
14
Column address to
WE delay time
t
AWD
42
49
ns
14
OE hold time from WE
t
OEH
13
15
ns
Refresh Cycle
HM5164805F/HM5165805F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
CAS setup time (CBR refresh cycle)
t
CSR
5—
ns
CAS hold time (CBR refresh cycle)
t
CHR
8
10
ns
WE setup time (CBR refresh cycle)
t
WRP
0—
ns
WE hold time (CBR refresh cycle)
t
WRH
8
10
ns
RAS precharge to CAS hold time
t
RPC
5—
ns
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