參數(shù)資料
型號(hào): HIP0061AS1
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
中文描述: 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 60K
代理商: HIP0061AS1
1
December 1997
HIP0061
60V, 3.5A, 3-Transistor Common Source
ESD Protected Power MOSFET Array
Features
Three 3.5A Power MOS N-Channel Transistors
Output Voltage to 60V
r
DS(ON)
. . . . . 0.225
Max Per Transistor at V
GS
= 10V
Pulsed Current. . . . . . . . . . . . . . . .10A Each Transistor
Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
Grounded Tab Eliminates Heat Sink Isolation
Applications
Automotive
Appliance
Industrial Control
Robotics
Relay, Solenoid, Lamp Drivers
Description
The HIP0061 is a power MOSFET array that consists of
three matched N-Channel enhancement mode MOS transis-
tors connected in a common source configuration. The
advanced Harris PASIC2 process technology used in this
product utilizes efficient geometries that provides outstand-
ing device performance and ruggedness.
The HIP0061 is designed to integrate three power devices in
one chip thus providing board layout area and heat sink sav-
ings for applications such as Motor Controls, Lamps,
Solenoids and Resistive Loads.
Symbol
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
HIP0061AS1
-40 to 125
7 Ld Staggered
Vertical SIP
Z7.05C
HIP0061AS2
-40 to 125
7 Ld Gullwing SIP
Z7.05B
DRAIN3
GATE3
DRAIN1
GATE1
DRAIN2
SOURCE, TAB
GATE2
4
1
2
3
5
6
7
Pinouts
HIP0061AS1
(SIP - VERTICAL)
TOP VIEW
HIP0061AS2
(SIP - GULLWING)
TOP VIEW
7
6
5
4
3
2
1
DRAIN3
GATE3
DRAIN2
SOURCE
GATE2
DRAIN1
GATE 1
TAB
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4
7
6
5
4
3
2
1
DRAIN3
GATE3
DRAIN2
SOURCE
GATE2
DRAIN1
GATE 1
TAB
File Number
3982.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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