參數(shù)資料
型號: HIP0061AS1
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
中文描述: 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/9頁
文件大?。?/td> 60K
代理商: HIP0061AS1
5
FIGURE 9. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
0
150
300
450
600
750
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz, T
C
= 25
o
C
0
1
2
3
4
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
5
V
GS
= 10V
V
GS
= 5V
0.1
1
10
-6
10
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
Z
θ
J
,
NOTES:
1. DUTY FACTOR, D = t
1
/t
2
2. PEAK T
J
= P
DM
x (Z
θ
JC
) +T
C
SINGLE PULSE
0.2
0.5
D = 1.0
T
C
= 25
o
C
0.1
0.05
0.02
0.01
t
P
V
GS
0.01
L
I
D
+
-
V
DS
V
DD
R
G
DUT
0V
t
P
V
GS
I
D
V
DS
t
AV
0
BV
DSS
10 V
0
I
AS
0
HIP0061
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