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參數(shù)資料
| 型號(hào)： | HIP0061AS1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array |
| 中文描述： | 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | HIP0061AS1 |
4
FIGURE 3. TYPICAL SATURATION CHARACTERISTICS
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BV
DSS
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED V
GS(TH)
vs JUNCTION TEMPERATURE
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
2
4
6
8
10
0
2.5
5.0
7.5
10.0
V
GS
= 4V
V
GS
= 5V
PULSE DURATION = 300
μ
s, T
C
= 25
o
C
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
0
2
4
6
8
10
0
5
10
15
20
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 15V
25
o
C
-40
o
C
125
o
C
T
J
, JUNCTION TEMPERATURE (
o
C)
r
D
,
0
-75
0.5
1.0
1.5
2.0
2.5
-25
25
75
125
175
PULSE DURATION = 300
μ
s, V
GS
= 10V, I
D
= 3.5A
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
-75
-25
25
75
125
175
0.8
0.9
1.0
1.1
1.2
I
D
= 100
μ
A
0
-75
0.5
1.0
1.5
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
G
,
-25
25
75
125
175
V
GS
= V
DS
, I
D
= 250
μ
A
0
2
8
10
0
4
8
12
V
G
,
Q, GATE CHARGE (nC)
4
6
V
DS
= 50V
V
DS
= 30V
V
DS
= 20V
I
D
= 2.0A, T
C
= 25
o
C
HIP0061
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