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參數(shù)資料
| 型號(hào)： | HIP0061AS1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array |
| 中文描述： | 3.5 A, 60 V, 0.265 ohm, 3 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 60K |
| 代理商： | HIP0061AS1 |
3
Short-Circuit Input Capacitance,
Common Source
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
142
-
pF
Short-Circuit Output Capacitance,
Common Source
C
OSS
-
107
-
pF
Short-Circuit Reverse Transfer
Capacitance, Common Source
C
RSS
-
24
-
pF
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Diode Forward Voltage (Note 5)
V
SD
t
rr
I
SD
= 2A, V
GS
= 0V
I
SD
= 2A, dI
SD
/dt = 100A/
μ
s
-
0.9
1.1
V
Reverse Recovery Time
-
50
-
ns
NOTES:
5. Pulse test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
6. Independent of operating temperature.
Typical Performance Curves
FIGURE 1A. 25
o
C SAFE-OPERATING AREA CURVE
FIGURE 1B. 105
o
C SAFE-OPERATING AREA CURVE
FIGURE 1C. 125
o
C SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
0.1
10
100
1
10
1
V
DS
, DRAIN VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
μ
s
100
μ
s
1ms
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
10ms
100ms
DC
0.1
10
100
1
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
μ
s
100
μ
s
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
T
C
= 105
o
C
T
J
= MAX RATED
10ms
100ms
DC
0.1
10
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
μ
s
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
10ms
100ms
1ms
100
μ
s
DC
1
T
C
= 125
o
C
T
J
= MAX RATED
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
1
0.001
0.01
1.0
0.1
5
10
50
STARTING T
J
= 125
o
C
STARTING T
J
= 25
o
C
HIP0061
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