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參數(shù)資料
| 型號(hào)： | HGTP7N60A4_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V SMPS Series N-Channel IGBT |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP7N60A4_NL |
2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
01.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,
C
O
L
E
C
T
O
R
T
O
EM
IT
T
E
R
CU
RR
EN
T
(A
)
0
5
10
1.5
2.0
3.0
25
20
TJ = 125
oC
TJ = 150
oC
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, VGE = 12V
30
TJ = 25
oC
0.5
2.5
15
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
s
TJ = 150
oC
TJ = 25
oC
0
5
10
25
20
30
15
0
1.0
1.5
2.0
3.0
0.5
2.5
TJ = 125
oC
E
ON
2
,T
URN-
ON
ENERG
Y
L
O
SS
(
J)
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
4
2
6
8
101214
TJ = 125
oC, V
GE = 12V, VGE = 15V
RG = 25, L = 1mH, VCE = 390V
TJ = 25
oC, V
GE = 12V, VGE = 15V
100
0
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
,T
URN-
O
F
ENERGY
L
O
SS
(
J)
0
50
200
100
250
350
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 125
oC, V
GE = 12V OR 15V
150
RG = 25, L = 1mH, VCE = 390V
4
2
6
8
101214
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(
O
N
)I
,
T
URN-
ON
DEL
A
Y
T
IM
E
(n
s
)
8
14
16
TJ = 125
oC, V
GE = 15V
RG = 25, L = 1mH, VCE = 390V
12
10
TJ = 25
oC, V
GE = 15V
TJ = 125
oC, V
GE = 12V
TJ = 25
oC, V
GE = 12V
4
26
8
10
12
14
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,
R
ISE
T
IM
E
(n
s
)
0
20
10
40
30
RG = 25, L = 1mH, VCE = 390V
TJ = 25
oC, V
GE = 12V, VGE = 15V
TJ = 125
oC, V
GE = 12V, VGE = 15V
4
26
8
10
12
14
0
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
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| HGTP7N60B3 | 制造商:Harris Corporation 功能描述: |
| HGTP7N60B3D | 功能描述:IGBT 晶體管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
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