參數(shù)資料
型號(hào)： HGTP7N60A4_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V SMPS Series N-Channel IGBT
中文描述： 34 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 173K
代理商： HGTP7N60A4_NL
2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC
ICE = 7A
VCE = 390V
VGE = 15V
RG = 25
L = 1mH
Test Circuit (Figure 20)
-10
-
ns
Current Rise Time
trI
-7
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
130
150
ns
Current Fall Time
tfI
-75
85
ns
Turn-On Energy (Note 2)
EON1
-50
-
J
Turn-On Energy (Note 2)
EON2
-
200
215
J
Turn-Off Energy (Note 3)
EOFF
-
125
170
J
Thermal Resistance Junction To Case
RθJC
--
1.0
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC, CASE TEMPERATURE (
oC)
I CE
,
DC
COL
L
ECT
O
R
CURRENT
(
A
)
50
10
0
30
20
25
75
100
125
150
35
VGE = 15V
15
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
20
0
I CE
,
C
O
L
ECT
O
R
T
O
EM
IT
T
E
R
CU
RR
EN
T
(A
)
300
400
200
100
500
600
0
30
10
40
TJ = 150
oC, R
G = 25, VGE = 15V, L = 100H
f MA
X
,O
P
E
R
A
T
ING
F
R
E
Q
UE
NCY
(k
Hz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
200
20
510
500
TJ = 125
oC, R
G = 25, L = 2mH, V CE = 390V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 1.0
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TC
VGE
15V
75oC
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,
PE
AK
SHO
R
T
CI
R
C
U
IT
C
URR
ENT
(A
)
t SC
,
S
H
OR
T
C
IR
C
U
IT
W
ITH
S
T
A
N
D
TI
ME
(
s)
10
11
12
15
4
6
14
20
80
100
140
16
13
14
8
10
12
40
60
120
VCE = 390V, RG = 25, TJ = 125
oC
tSC
ISC
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
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