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參數(shù)資料
| 型號(hào)： | HGTP7N60A4_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V SMPS Series N-Channel IGBT |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP7N60A4_NL |
2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
34
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
14
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
35A at 600V
Single Pulse Avalanche Energy at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
25mJ at 7A
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
600
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = -10mA, VGE = 0V
20
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
250
A
TJ = 125
oC-
-
2
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 7A,
VGE = 15V
TJ = 25
oC-
1.9
2.7
V
TJ = 125
oC-
1.6
2.2
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = 600V
4.5
5.9
7.0
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 25, VGE = 15V
L = 100
H, VCE = 600V
35
-
A
Pulsed Avalanche Energy
EAS
ICE = 7A, L = 500H25
-
mJ
Gate to Emitter Plateau Voltage
VGEP
IC = 7A, VCE = 300V
-
9.0
-
V
On-State Gate Charge
Qg(ON)
IC = 7A,
VCE = 300V
VGE = 15V
-
37
45
nC
VGE = 20V
-
48
60
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC
ICE = 7A
VCE = 390V
VGE = 15V
RG = 25
L = 1mH
Test Circuit (Figure 20)
-11
-
ns
Current Rise Time
trI
-11
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
100
-
ns
Current Fall Time
tfI
-45
-
ns
Turn-On Energy (Note 2)
EON1
-55
-
J
Turn-On Energy (Note 2)
EON2
-
120
150
J
Turn-Off Energy (Note 3)
EOFF
-60
75
J
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
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