參數(shù)資料
型號： HGTG5N120BND_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
中文描述： 21 A, 1200 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 6/8頁
文件大小： 216K
代理商： HGTG5N120BND_NL
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
CIES
COES
1.0
CRES
FREQUENCY = 1MHz
C,
CAP
A
C
IT
ANCE
(
n
F
) 1.5
2.0
I CE
,COL
L
E
CT
OR
T
O
EM
IT
T
E
R
CURRENT
(A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
00.5
1.0
DUTY CYCLE < 0.5%, TC = 110
oC
PULSE DURATION = 250
s
VGE = 15V
VGE = 10V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
2
4
6
8
10
t1, RECTANGULAR PULSE DURATION (s)
Z
θJC
,
N
O
R
M
A
LI
ZE
D
T
H
ERM
A
L
R
E
SPO
NSE
10-2
10-1
100
10-5
10-3
10-2
10-1
100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZθJC x RθJC) + TC
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t1
t2
PD
1
10
100
0
1234
5
678
I F
,F
O
R
W
ARD
CU
RRE
N
T
(
A
)
VF, FORWARD VOLTAGE (V)
150oC
-55oC
25oC
60
50
40
30
20
10
0
1234
5
6
7
IF, FORWARD CURRENT (A)
t,
RECO
VE
R
Y
T
IM
E
(
n
s
)
TC = 25
oC, dl
EC / dt = 200A/s
trr
ta
tb
HGTG5N120BND, HGTP5N120BND
相關(guān)PDF資料
PDF描述
HGTP5N120BND_NL 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP12N60A4D_NL 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP12N60C3_NL 24A,600V, UFS Series N-Channel IGBTs
HGTP12N60C3D_NL 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP20N60A4_NL 600V, SMPS Series N-Channel IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG5N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG7N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG7N60A4D 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG7N60A4D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
HGTG7N60A4D_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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